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HomeProducts1N5818-TP分立半导体产品 《 DIODE SCHOTTKY 30V 1A DO41 》
1N5818-TP分立半导体产品 《 DIODE SCHOTTKY 30V 1A DO41    》
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1N5818-TP分立半导体产品 《 DIODE SCHOTTKY 30V 1A DO41 》

1N5818-TP 类型 描述 型号 1N5818-TP 最低采购数量 1 品牌 Micro Commercial Co 包装 剪切带(CT),卷带(TR) 封装/外壳 * 系列 - 零件状态 在售 二极管类型 肖特基 电压 - DC 反向 (Vr)(最大值) 30 V 电流 - 平均整流 (Io) 1A 不同 If 时电压 - 正向 (Vf) 550 mV 1 A 速度 快速恢复 =< 500ns,> 200mA(Io) 反向恢复时间 (trr) - 不同 Vr 时电流 - 反向泄漏 1 mA 30 V 不同 Vr、F 时电容 - 安装类型 通孔 封装/外壳 DO-204AL,DO-41,轴向 供应商器件封装 DO-41 工作温度 - 结 -55°C # 125°C 温度 -

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0.44 RMB

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SKU name

1N5818-TP

SKU ID

6234534459957

SKU price

0.44 RMB

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Seller: 欣恒泰电子

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Seller: 欣恒泰电子

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Product details

1N5818-TP
类型描述
型号1N5818-TP
最低采购数量1
品牌Micro Commercial Co
包装剪切带(CT),卷带(TR)
封装/外壳*
系列-
零件状态在售
二极管类型肖特基
电压 - DC 反向 (Vr)(最大值)30 V
电流 - 平均整流 (Io)1A
不同 If 时电压 - 正向 (Vf)550 mV 1 A
速度快速恢复 =< 500ns,> 200mA(Io)
反向恢复时间 (trr)-
不同 Vr 时电流 - 反向泄漏1 mA 30 V
不同 Vr、F 时电容-
安装类型通孔
封装/外壳DO-204AL,DO-41,轴向
供应商器件封装DO-41
工作温度 - 结-55°C # 125°C
温度-
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